STD2040PL View Datasheet(PDF) - Samhop Mircroelectronics

Part Name

Description

Manufacturer

STD2040PL

P-Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S T U/D2040P L

E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

DRAIN-SOURCE DIODE CHARACTERISTICS a

Diode Forward Voltage

VSD VGS = 0V, Is =-20A

Min Typ Max Unit

-1.02 -1.3 V

Notes

a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

b.Guaranteed by design, not subject to production testing.

20

-V GS =10V

-V GS =4V

16

-V GS =4.5V

-V GS =3V

12

8

4

0

0 0.5 1 1.5 2 2.5 3

-V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

1800

1500

1200

C is s

900

600

300

0 C rss

05

10 15

C oss

20 25 30

-V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

20

25 C

-55 C

15

T j=125 C

10

5

0

0 1.5

2.0 2.5

3

3.5 4

-V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1.6

V G S =-10V

1.4

ID=-16A

1.2

1.0

0.8

0.6

0.4

-55

-25 0 25 50 75 100 125

T j( C )

T j, J unction T emperature ( C )

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

3

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