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Part Name
Description
STU10NA50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STU10NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
STU10NA50 Datasheet PDF : 0 Pages
STU10NA50
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Conditions
V
DD
= 250 V
R
G
= 4.7
Ω
V
DD
= 400 V
R
G
= 47
Ω
I
D
=5 A
V
GS
= 10 V
I
D
= 10 A
V
GS
= 10 V
Min.
Typ.
20
32
190
Max.
28
45
Unit
ns
ns
A/
µ
s
Q
g
Total Gate Charge
V
DD
= 400 V I
D
= 10 A V
GS
= 10 V
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
80 110 nC
12
nC
37
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 400 V
R
G
= 4.7
Ω
I
D
= 10 A
V
GS
= 10 V
Min.
Typ.
16
12
30
Max.
22
18
42
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage I
SD
= 10 A
V
GS
= 0
t
rr
Reverse Recovery
Time
Q
rr
Reverse Recovery
Charge
I
SD
= 10 A
V
DD
= 100 V
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
di/dt = 100 A/
µ
s
T
j
= 150
o
C
Min.
Typ.
600
10.2
34
Max.
10.2
40.8
1.6
Unit
A
A
V
ns
µ
C
A
3/5
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