STPR620CT(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPR620CT Datasheet PDF : 6 Pages
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STPR620CT/STPR620CF
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c)
Junction to case
TO220AB
Per diode
ISOWATT220AB Per diode
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
Value
6.5
8.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
IR *
Tj = 25°C
Tj = 100°C
VF **
Tj = 125°C
Tj = 125°C
Tj = 25°C
VR = VRRM
IF = 3 A
IF = 6 A
IF = 6 A
Pulse test :
* tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
trr
Tj = 25°C
IF = 0.5A
IR = 1A
Irr = 0.25A
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
VFP
Tj = 25°C
IF = 1A
tr = 10 ns
To evaluate the conduction losses use the following equation :
P = 0.78 x IF(AV) + 0.070 x IF2(RMS)
Min. Typ. Max. Unit
50 µA
0.6 mA
0.99 V
1.20
1.25
Min. Typ. Max. Unit
30 ns
20
ns
3
V
Fig. 1: Average forward power dissipation versus aver-
age forward current (Per diode).
Fig. 2: Peak current versus form factor.(Per diode)
2/6
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