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STPR1020CT View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPR1020CT
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPR1020CT Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STPR1020CB/CG/CT/CF/CFP/CR
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration
(D2PAK, DPAK, TO-220AB).
IM(A)
50
40
30
20
10 IM
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=100°C
1E+0
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.1
1E-3
T
t(s)
δ=tp/T
tp
1E-2
1E-1
1E+0
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.1
1E-2
1E-1
T
t(s)
δ=tp/T
tp
1E+0
1E+1
IFM(A)
50.0
10.0
1.0
Tj=125°C
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 8: Reverse recovery charges versus dIF/dt
(per diode).
C(pF)
50
40
30
20
10
1
VR(V)
10
F=1MHz
Tj=25°C
Qrr(nC)
200
100
IF=IF(av)
90% confidence
Tj=125°C
50
20
10
100 200
10
20
dIF/dt(A/µs)
50
100
200
500
4/10
 

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