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STB7NC70Z-1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STB7NC70Z-1 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / D2PAK /
I2PAK
1
62.5
300
TO-220FP
3.13
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6
238
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
700
Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp.
ID = 1 mA, VGS = 0
0.8
Coefficient
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
VGS = ±20V
±10
Current (VDS = 0)
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5 A
Min. Typ. Max. Unit
3
4
5
V
1.1
1.38
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
7
1840
140
18
Max.
Unit
S
pF
pF
pF
2/13
 

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