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STP40NF20 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP40NF20 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
ID = 1mA, VGS =0
VDS = max ratings
VDS = max ratings@125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
Min. Typ. Max. Unit
200
V
1 µA
10 µA
±100 nA
2
3
4V
0.038 0.045
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 20A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100V, ID = 20A
RG = 4.7VGS = 10V
(see Figure 17)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 160V, ID = 40A,
VGS = 10V
(see Figure 18)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
30
S
2500
pF
510
pF
78
pF
20
ns
44
ns
74
ns
22
ns
75
nC
13.2
nC
35.5
nC
4/17
 

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