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STP20NF20 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP20NF20 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD20NF20, STF20NF20, STP20NF20
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
-
VSD(2) Forward on voltage
ISD = 20 A, VGS = 0
-
trr
Reverse recovery time ISD = 20 A, di/dt = 100A/µs
Qrr
Reverse recovery charge VDD = 50 V
-
IRRM Reverse recovery current (see Figure 20)
trr
Reverse recovery time ISD = 20 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge VDD = 50 V, Tj = 150 °C
-
IRRM Reverse recovery current (see Figure 20)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
18
A
72
A
1.6 V
155
ns
775
nC
10
A
183
ns
1061
nC
11.6
A
Doc ID 13154 Rev 4
5/15
 

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