DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

STP36NF06FP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP36NF06FP Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP36NF06 STP36NF06FP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Tl
Maximum Lead Temperature For Soldering Purpose
Max
(1.6 mm from case, for 10 sec)
TO-220 TO-220FP
2.14
6
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 15 A
Min.
2
Typ. Max.
0.032 0.040
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID = 15 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
12
690
170
68
Max.
Unit
S
pF
pF
pF
2/9
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]