STP36NF06FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP36NF06FP

N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET™ II POWER MOSFET

STMicroelectronics 

STP36NF06

STP36NF06FP

N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

STP36NF06

STP36NF06FP

60 V

60 V

<0.040 Ω

<0.040 Ω

s TYPICAL RDS(on) = 0.032 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s APPLICATION ORIENTED

CHARACTERIZATION

ID

30 A

18 A(*)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

remarkable manufacturing reproducibility.

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED

Ordering Information

SALES TYPE

STP36NF06

STP36NF06FP

MARKING

STP36NF06

STP36NF06FP

PACKAGE

TO-220

TO-220FP

PACKAGING

TUBE

TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(*) Current Limited by Package

October 2003

STP36NF06

30

21

120

70

0.47

Value

STP36NF06FP

60

60

± 20

18(*)

12

72

25

0.17

20

200

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 175

°C

(1) ISD ≤36A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 18 A, VDD = 45V

1/9

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