STP36NE06FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP36NE06FP

N-CHANNEL 60V - 0.032Ω- 36A - TO-220/TO-220FP STripFETPOWER MOSFET

STMicroelectronics 

STP36NE06

®

STP36NE06FP

N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP

STripFET™ POWER MOSFET

TYPE

ST P36NE06

ST P36NE06FP

VDSS

60 V

60 V

RDS(on)

< 0.040 Ω

< 0.040 Ω

s TYPICAL RDS(on) = 0.032 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s LOW GATE CHARGE 100 oC

s APPLICATION ORIENTED

CHARACTERIZATION

ID

36 A

20 A

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ”Single Feature Size™ ”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM ( •)

Ptot

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

VISO Insulation Withstand Voltage (DC)

dv/dt Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

July 1998

Value

Uni t

STP36NE06 STP36NE06FP

60

V

60

V

± 20

V

36

20

A

24

14

A

144

144

A

100

0.66

35

0.27

W

W/oC



2000

V

7

V/ ns

-65 to 175

oC

175

oC

(1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/9

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