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STP22NE03L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP22NE03L Datasheet PDF : 5 Pages
1 2 3 4 5
STP22NE03L
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.5
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
22
TBD
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc =125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS ID = 250 µA
VGS = 10V ID = 11 A
VGS = 5V ID = 11 A
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.034 0.05
0.049 0.06
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
22
A
VGS = 10 V
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =11 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
7
Typ.
13
Max.
Unit
S
680 950 pF
160 220 pF
60
85
pF
2/5
 

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