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STP20NM60A View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP20NM60A Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
11
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1630
pF
Coss
Output Capacitance
350
pF
Crss
Reverse Transfer
Capacitance
33
pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
150
pF
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-off Delay Time
tf
Fall Time
Test Conditions
VDD = 300V, ID = 10 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 20A,
VGS = 10V
Test Conditions
VDD = 300V, ID = 20 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
trr
Reverse Recovery Time
ISD = 20 A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 50 V, Tj = 25°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
trr
Reverse Recovery Time
ISD = 20 A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 50 V, Tj = 150°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
20
16
45
8.2
19
Max.
60
Unit
ns
ns
nC
nC
nC
Min.
Typ.
46
20
Max.
Unit
ns
ns
Min.
Typ.
432
5.1
23.6
595
7.3
24.8
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
3/12
 

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