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STP14NK60Z View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP14NK60Z Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris-
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
µA
50 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
±10 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 100µA
3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 6A
0.45 0.5
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 6A
11
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2220
pF
240
pF
57
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 480V
122
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480V, ID = 12A
VGS =10V
75
nC
13.2
nC
38.6
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
5/19
 

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