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STP11NM65N View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP11NM65N Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD11NM65N, STF11NM65N,
STFI11NM65N, STP11NM65N
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET
in DPAK, TO-220FP, I²PAKFP and TO-220 packages
Datasheet - production data
TAB
3
1
DPAK
1
2
3
I²PAKFP
3
2
1
TO-220FP
TAB
3
2
1
TO-220
Features
Order codes
VDSS @
TJmax
RDS(on)
max
ID
STD11NM65N
STF11NM65N
STFI11NM65N
STP11NM65N
710 V < 0.455 Ω 11 A
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
• Switching applications
Description
* 
6 
$0Y
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmeshâ„¢ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order codes
STD11NM65N
STF11NM65N
STFI11NM65N
STP11NM65N
Table 1. Device summary
Marking
Packages
11NM65N
DPAK
TO-220FP
I²PAKFP
TO-220
Packaging
Tape and reel
Tube
July 2013
This is information on a product in full production.
Doc ID 13476 Rev 4
1/21
www.st.com
 

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