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STP30N05FI View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP30N05FI Datasheet PDF : 0 Pages
STP30N05
STP30N05FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP30N05
STP30N05FI
VDSS
50 V
50 V
R DS( on)
< 0.05
< 0.05
ID
30 A
19 A
s TYPICAL RDS(on) = 0.045
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID
Drain Current (continuous) at T c = 25 oC
ID
Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
Val ue
STP30N05
ST P3 0N 05 F I
50
50
± 20
30
19
21
13
120
120
105
40
0.7
0. 27
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
 

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