STP140NF55 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP140NF55

N-channel 55V - 0.0065Ω- 80A - D²2PAK - I²PAK - TO-220 STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB140NF55 - STB140NF55-1 - STP140NF55

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250 µA, VGS = 0

55

V

VDS = Max rating

VDS = Max rating, TC = 125 °C

1 µA

10 µA

VGS = ±20V

±100 nA

VDS = VGS, ID = 250µA

2

3

4V

VGS = 10 V, ID = 40 A

0.0065 0.008 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, ID= 40 A

VDS = 25V, f = 1 MHz

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 44V, ID= 80A

VGS =10V

(see Figure 14)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

100

S

5300

pF

1000

pF

290

pF

142

nC

27

nC

55

nC

4/15

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