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STP140NF55 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP140NF55 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STB140NF55 - STB140NF55-1 - STP140NF55
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
ID (1)
ID (1)
IDM (2)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalance energy
Tstg
Storage temperature
Tj
Operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD < 80A, di/dt < 300A/µs, VDD=80%V(BR)DSS
4. Starting Tj = 25°C, ID = 40A, VDD = 30V
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb (1) Thermal resistance junction-pcb max
Tl
Maximum lead temperature for soldering
purpose (for 10 sec, 1.6mm from case)
1. When mounted on 1 inch², FR4 board, 2 oz Cu
Value
55
±20
80
80
320
300
2
10
1.3
–55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Value
TO-220 - I²PAK
0.5
62.5
--
D²PAK
--
35
Unit
°C/W
°C/W
°C/W
300
°C
3/15
 

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