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STX42N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STX42N65M5 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STx42N65M5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.1
1.0
0.9
AM01571v1
ID = 250 µA
RDS(on)
(norm)
2.0
1.5
ID = 16.5 A
VGS= 10 V
AM01573v1
1.0
0.8
0.7
0.5
0.6
-50
0
50
100
TJ(°C)
0
-50
0
50
100 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VSD
(V)
1.0
TJ=-25°C
AM01574v1
BVDSS
(norm)
AM01572v1
0.9
1.05
0.8
0.7
0.6
TJ=25°C
1.00
0.5
TJ=150°C
0.4
0.95
ID = 1 mA
0.3
0.2
05
10 15 20 25 30 ISD(A)
0.90
-50
0
50
100 TJ(°C)
Figure 18. Switching losses vs gate resistance
(1)
E
(µJ)
ID=20A
600 VDD=400V
L=50µH
500
Eon
AM01575v1
400
300
Eoff
200
100
0
0 5 10 15 20 25 30 35 40 45 RG()
1. Eon including reverse recovery of a SiC diode
8/18
Doc ID 15317 Rev 3
 

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