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STX42N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STX42N65M5 Datasheet PDF : 18 Pages
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STx42N65M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min.
-
Typ.
61
24
65
13
Max Unit
ns
ns
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 33 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
-
VDD = 100 V (see Figure 24)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
-
(see Figure 24)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
33 A
132 A
1.5 V
400
ns
7
µC
35
A
532
ns
10
µC
38
A
Doc ID 15317 Rev 3
5/18
 

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