STD10NM60N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD10NM60N

N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = max rating

drain current (VGS = 0) VDS = max rating, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V; VDS=0

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source on

resistance

VGS = 10 V, ID = 4 A

Min. Typ. Max. Unit

600

V

1 µA

100 µA

100 nA

2

3

4

V

0.53 0.55 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

540

pF

-

44

- pF

1.2

pF

Equivalent

Coss

(1)

eq

capacitance time

related

VDS = 0 to 480 V, VGS = 0

-

110

- pF

Rg

Gate input resistance f=1 MHz open drain

-

6

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 8 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 17)

19

nC

-

3

- nC

10

nC

1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

4/17

Doc ID 15764 Rev 5

Share Link: