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D60NF3LL View Datasheet(PDF) - Texas Instruments

Part NameD60NF3LL TI
Texas Instruments TI
DescriptionN-channel 30V - 0.0075Ω - 60A - DPAK STripFET™ II Power MOSFET
D60NF3LL Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD60NF3LL
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 60A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 60A, di/dt = 100A/µs,
Reverse recovery charge VDD = 15V, Tj = 150°C
Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
65
105
3.4
Max. Unit
60
A
240 A
1.2 V
ns
nC
A
5/13
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