STD3NK100Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD3NK100Z
STMicroelectronics
STD3NK100Z Datasheet PDF : 16 Pages
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Electrical characteristics
STF3NK100Z - STP3NK100Z - STD3NK100Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off
Symbol
Parameter
Test conditions
Min. Typ.
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
1000
VDS = Max rating,
VDS = Max rating,Tc=125°C
VGS = ± 20V
VDS= VGS, ID = 50µA
3
VGS= 10V, ID= 1.25A
3.75
5.4
Max. Unit
V
1 µA
50 µA
±10 µA
4.5 V
6Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 1.25A
2.4
S
Ciss Input capacitance
601
pF
Coss
Crss
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
53
12
pF
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS =0V, VDS =0V to 800V
15
pF
RG Gate input resistance
f=1 MHz, open drain
8.6
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=800V, ID = 2.5A
VGS =10V
(see Figure 17)
18
nC
3.6
nC
9.2
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
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