STD4NK60Z-1_13 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD4NK60Z-1_13

N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™ Power MOSFETs in D²PAK, I²PAK, DPAK and IPAK packages

STMicroelectronics 

Electrical characteristics

STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On/off states

Test conditions

Drain-source

V(BR)DSS

breakdown voltage

Zero gate voltage

IDSS

drain current (VGS = 0)

IGSS

Gate-body leakage

current (VDS = 0)

VGS(th) Gate threshold voltage

Static drain-source on

RDS(on) resistance

ID =1 mA

VDS = 600 V

VDS = 600 V, TC = 125 °C

VGS = ± 20 V

VDS = VGS, ID = 50 μA

VGS = 10 V, ID = 2 A

Min. Typ. Max. Unit

600

V

1 μA

50 μA

± 10 μA

3 3.75 4.5 V

1.7 2 Ω

Symbol

Parameter

Table 6. Dynamic

Test conditions

Min. Typ. Max. Unit

(1)

gfs

Forward transconductance VDS = 15 V, ID = 2 A

-3

S

Ciss Input capacitance

- 510

pF

VDS = 25 V, f = 1 MHz,

Coss Output capacitance

- 67

pF

VGS = 0

Crss Reverse transfer capacitance

- 13

pF

(2) Equivalent output

Coss eq. capacitance

VDS =0, VDS = 0 to 480 V

- 38.5

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

- 12

ns

VDD = 300 V, ID = 2 A,

- 9.5

ns

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

- 29

ns

- 16.5

ns

tr(Voff) Off-voltage rise time

VDD = 480 V, ID = 4 A,

- 12

ns

tr

Fall time

RG = 4.7 Ω, VGS = 10 V

- 12

ns

tc Cross-over time

(see Figure 17)

- 19.5

ns

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 480 V, ID = 4 A,

VGS = 10 V

(see Figure 16)

- 18.8 26 nC

- 3.8

nC

- 9.8

nC

1. Pulsed: pulse duration=300μs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

4/26

DocID8882 Rev 8

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