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STD4NK60Z_13 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD4NK60Z_13 Datasheet PDF : 0 Pages
STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
ID
(1)
IDM
PTOT
Drain-source voltage
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
ESD
(2)
dv/dt
Gate-source human body model (C=100 pF, R=1.5
kΩ)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj
Max operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.
Table 3. Thermal data
Symbol
Parameter
600
± 30
4
2.5
16
70
0.56
3
4.5
-55 to 150
150
V
V
A
A
A
W
W/°C
kV
V/ns
°C
°C
Value
D2PAK,
I2PAK
DPAK,
IPAK
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
1.79
62.5
100
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID=IAR, VDD= 50 V)
4
A
120
mJ
DocID8882 Rev 8
3/26
26
 

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