Electrical characteristics
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3 A, VGS=0
ISD= 3 A,
di/dt = 100A/µs,
VDD=80 V, Tj=150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
3
A
12 A
1.6 V
400
ns
1520
µC
7.6
A
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