STD4NK80Z-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD4NK80Z-1

N-Channle MOSFET

STMicroelectronics 

Electrical characteristics

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 3 A, VGS=0

ISD= 3 A,

di/dt = 100A/µs,

VDD=80 V, Tj=150°C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

3

A

12 A

1.6 V

400

ns

1520

µC

7.6

A

6/18

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