STD4NK80ZT4 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD4NK80ZT4

N-Channle MOSFET

STMicroelectronics 

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC=100°C

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating factor

Gate source ESD

VESD(G-S) (HBM-C=100pF, R=1.5KΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1s; Tc= 25°C)

TJ Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤4A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Value

TO-220/DPAK/

IPAK

TO-220FP

800

± 30

3

3 (1)

1.89

1.89 (1)

12

12 (1)

80

25

0.64

0.21

3000

4.5

-

2500

-55 to 150

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Thermal resistance junction-

case max

Rthj-a

Thermal resistance junction-

ambient max

Tl

Maximum lead temperature for

soldering purpose

TO-220

Value

TO-220FP

1.56

5

62.5

300

DPAK

IPAK

1.56

100

Unit

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

Unit

°C/W

°C/W

°C

3/18

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