STD4NK50ZD-1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD4NK50ZD-1
STMicroelectronics
| STD4NK50ZD-1 Datasheet PDF : 0 Pages | |||
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test condictions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 3A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3A,
di/dt = 100A/µs,
VDD = 34V, Tj = 25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse Recovery Charge
Reverse recovery current
ISD = 3A,
di/dt = 100A/µs,
VDD = 34V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
3
A
12 A
1.6 V
73
ns
140
nC
3.82
A
118
ns
260
nC
4.4
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test condictions Min. Typ. Max Unit
BVGSO(1)
Gate-source braekdown
voltage
IGS = ±1mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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