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STD4NK50ZD-1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD4NK50ZD-1 Datasheet PDF : 0 Pages
Electrical characteristics
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
µA
50 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±10 µA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 50µA
2.5 3.5 4.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 1.5A
2.3 2.7
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 1.5A
1.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS= 0
310
pF
49
pF
10
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS= 0, VDS =0V to 400V
33
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD= 400V, ID = 3A
VGS =10V
(see Figure 11)
12
nC
3
nC
7
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test condictions
VDD = 250 V, ID= 1.5A,
RG = 4.7Ω, VGS =10V
(see Figure 18)
Min. Typ. Max. Unit
9.5
ns
15.5
ns
23
ns
22
ns
4/17
 

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