DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

STD4NK50 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD4NK50 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
2.3
2.7
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 1.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
Test Conditions
VDD = 250 V, ID = 1.5 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400 V, ID = 3 A,
VGS = 10 V
Min.
Typ.
1.5
310
49
10
33
Typ.
10
7
12
3
7
Max. Unit
S
pF
pF
pF
pF
Max. Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 250 V, ID = 1.5 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 3 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
21
11
10
10
17
Max. Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
3
A
12
A
VSD (1) Forward On Voltage
ISD = 3 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs
VDD = 40 V, Tj = 150°C
(see test circuit, Figure 5)
260
ns
935
nC
7.2
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/13
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]