STD50NH02L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD50NH02L Datasheet PDF : 16 Pages
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Electrical characteristics
2
Electrical characteristics
STD50NH02L - STD50NH02L-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 25mA, VGS =0
VDS = 20V
VDS = 20V, TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 25A
VGS = 5V, ID = 12.5A
24
V
1
µA
10
µA
±100 nA
1
1.8
V
0.0085 0.0105 Ω
0.012 0.020 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
RG Gate Input Resistance
VDS = 15V, ID = 25A
VDS = 25V, f = 1MHz,
VGS = 0
f = 1 MHz Gate
DC Bias = 0 Test Signal
Level = 20 mV Open
Drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 10V, ID = 25A
RG = 4.7Ω VGS = 10V
(see Figure 13)
Qg
Qgs
Qgd
Qoss(2)
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
VDD = 10V, ID = 50A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
VDS= 16 V, VGS= 0 V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A
Min.
Typ.
27
1400
400
55
1
10
130
27
16
24
5
3.5
9.5
Max.
Unit
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
nC
4/16
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