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STD40NF10 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD40NF10 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
STP40NF10 - STD40NF10
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS Breakdown voltage
Zero gate voltage
IDSS Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
100
V
VDS = Max rating
VDS=Max rating,TC=125°C
1 µA
10 µA
VGS = ±20V
±100 nA
VDS = VGS, ID = 250µA
2
3
4
V
VGS = 10V, ID = 25A
0.025 0.028
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15V, ID=28A
VDS = 25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 50V, ID = 40A,
VGS = 10V
(see Figure 17)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Min.
Typ.
22
2180
298
Max. Unit
S
pF
pF
83.7
pF
46.5 62 nC
13.3
nC
17.5 22.5 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDD = 50V, ID = 25A
RG = 4.7VGS = 10V
(see Figure 16)
VDD = 27V, ID = 40A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
Min. Typ. Max. Unit
21
ns
46
ns
54
ns
13
ns
4/15
 

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