STD2NB60T4 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD2NB60T4

N-CHANNEL 600V - 3.3 Ω - 2.6A DPAK/IPAK PowerMESH™ MOSFET

STMicroelectronics 

STD2NB60/STD2NB60-1

Table 3. Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain- gate Voltage (RGS = 20 kΩ)

VGS

Gate-source Voltage

ID

Drain Current (cont.) at TC = 25 °C

ID

Drain Current (cont.) at TC = 100 °C

IDM (1)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25 °C

Derating Factor

dv/dt (2) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

Note: 1. Pulse width limited by safe operating area

2. ISD ≤ 2.6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Table 4. Thermal Data

Symbol

Parameter

Rthj-case Thermal Resistance Junction-case

Max

Rthj-amb Thermal Resistance Junction-ambient Max

Tl

Maximum Lead Temperature For Soldering Purpose

Table 5. Avalanche Characteristics

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, δ < 1%)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

Value

600

600

± 30

2.6

1.6

10.4

50

0.4

4.5

-65 to 150

150

Value

2.5

100

275

Max Value

2.6

80

Unit

V

V

V

A

A

A

W

W°/C

V/ns

°C

°C

Unit

°C/W

°C/W

°C

Unit

A

mJ

2/11

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