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STD2N501 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD2N501 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STD2N50
THERMAL DATA
Rthj-case
Rthj-amb
Rt h c- sin k
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.78
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
2
20
1.5
1.2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
500
Typ.
Max.
Unit
V
25
µA
250 µA
± 100 nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
4.5
Max.
4
5.5
Unit
V
2
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max
ID = 1 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
0.65
Typ.
1
Max.
Unit
S
200 270 pF
35
50
pF
12
18
pF
2/10
 

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