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STD19NE06-T4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD19NE06-T4 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD19NE06
N-CHANNEL 60V - 0.042 - 19A IPAK/DPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD19NE06
60 V <0.050 19 A
s TYPICAL RDS(on) = 0.042
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175 oC OPERATING TEMPERATURE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 2002
.
Value
60
60
± 20
19
13.5
76
70
0.46
1.45
-55 to 175
(1) Starting Tj = 25 oC, ID = 30A, VDD = 30 V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/9
 

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