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STD150NH02LT4 View Datasheet(PDF) - STMicroelectronics

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Description
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STD150NH02LT4 Datasheet PDF : 16 Pages
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Electrical characteristics
2
Electrical characteristics
STD150NH02L
(TCASE=25°C unless otherwise specified)
Table 3. On(1) /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 25mA, VGS = 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 20V
VDS = 20V, TC = 125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 75A
VGS = 5V, ID = 37.5A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
24
V
1 µA
10 µA
±100 nA
1
1.8
V
0.003 0.0035
0.004 0.0065
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qoss(2)
Qgls(3)
RG
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 10 V, ID = 75A
VDS = 15V, f = 1 MHz,
VGS = 0
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 16V, ID = 150A
VGS = 10V
Output charge
Third-quadrant gate charge
Gate input resistance
VDS = 16V, VGS = 0V
VDS < 0V, VGS = 10V
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
60
S
4450
pF
1126
pF
141
pF
69 93 nC
13
nC
9
nC
27
nC
64
nC
1.6
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Qoss = Coss*Vin , Coss = Cgd + Cds . See Appendix A
3. Gate charge for synchronous operation
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