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STD10PF06(1999) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD10PF06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
STD10PF06
P - CHANNEL 60V - 0.18 - 10A TO-252
STripFETPOWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD10PF06
60 V
< 0.20
10 A
s TYPICAL RDS(on) = 0.18
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
Unit
VDS
VDGR
VG S
ID
ID
IDM()
Ptot
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
60
60
± 20
10
7
40
40
0.27
V
V
V
A
A
A
W
W /o C
dv/dt Peak Diode Recovery voltage slope
6
V/ns
Tstg Storage T emperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
() Pulse width limited by safe operating area
( 1) ISD 10 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
April 1999
1/8
 

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