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STP13NK60ZFP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP13NK60ZFP Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
tr(Voff)
tf
tc
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD= 300 V, ID= 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
VDD=300 V, ID= 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
VDD=480 V, ID= 10 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
Min. Typ. Max. Unit
22
ns
-
-
14
ns
61
ns
-
-
12
ns
10
ns
-
9
-
ns
20
ns
Table 7. Gate-source Zener diode
Symbol
Parameter
Test conditions
BVGSO
Gate-source breakdown Igs=±1mA
voltage
(open drain)
Min. Typ. Max. Unit
30
-
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A,
di/dt = 100 A/µs,
VDD=35 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
10
A
-
40
A
-
1.6
V
570
ns
-
4.5
µC
16
A
6/18
Doc ID 8527 Rev 7
 

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