STD12NM50ND View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD12NM50ND
STMicroelectronics
| STD12NM50ND Datasheet PDF : 0 Pages | |||
Electrical characteristics
STB12NM50ND, STD12NM50ND, STF12NM50ND
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
dv/dt(1) Drain-source voltage slope VDD = 400 V,ID = 11 A,
VGS = 10 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
3
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
1. Value measured at turn off under inductive load
44
4
0.29
1
100
100
5
0.38
V
V/ns
µA
µA
nA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15 V, ID= 5.5 A
VDS = 50 V, f =1 MHz,
VGS = 0
-
8
-
S
850
pF
-
48
-
pF
5
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
- 100
-
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
-
4.5
-
Ω
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 400 V, ID = 11 A
VGS = 10 V
Figure 19
30
nC
-
6
-
nC
17
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
Doc ID 14936 Rev 2
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