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STD12NM50ND View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD12NM50ND Datasheet PDF : 0 Pages
STB12NM50ND, STD12NM50ND, STF12NM50ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
VISO
dv/dt (3)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 11 A, di/dt 600 A/µs, VDD = 80% V(BR)DSS
Value
D²PAK
DPAK
500
± 25
11
6.9
44
100
TO-220FP
11 (1)
6.9 (1)
44 (1)
25
2500
40
-55 to 150
150
Unit
V
V
A
A
A
W
V
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-amb max
Tl
Maximum lead temperature for soldering
purposes
Value
D²PAK
DPAK
1.25
30
50
Unit
TO-220FP
5
°C/W
°C/W
62.5
°C/W
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
Unit
5
A
350
mJ
Doc ID 14936 Rev 2
3/16
 

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