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STD12NM50N View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD12NM50N Datasheet PDF : 18 Pages
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Electrical characteristics
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
dv/dt(1)
Peak diode recovery voltage Vdd=400V, Id=11A,
slope
Vgs=10V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 5.5A
1. Characteristic value at turn off inductive load
Typ.
44
3
0.29
Max
1
10
100
4
0.38
Unit
V
V/ns
µA
µA
nA
V
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max Unit
gfs (1) Forward transconductance VDS =15V, ID = 5.5A
8
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
880
pF
230
pF
30
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
130
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=400V, ID = 11A
VGS =10V
(see Figure 9)
30
nC
6
nC
15
nC
f=1MHz Gate DC Bias=0
Rg Gate input resistance
test signal level=20mV
4.5
open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
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