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STP20NM505 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP20NM505 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 250µA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
VGS = ±30V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 10 A
Min.
500
3
Typ.
4
0.20
Max.
1
10
±100
5
0.25
Unit
V
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Rg
Qg
Qgs
Qgd
Forward Transconductance
VDS > ID(ON) xRDS(ON)max,
ID = 10A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 400V
Gate Input Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
VDD=400V, ID = 20A
VGS =10V
(see Figure 15)
Min. Typ. Max. Unit
10
S
1480
pF
285
pF
34
pF
130
pF
1.6
Ω
40
56
nC
13
nC
19
nC
3/16
 

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