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STA335MLJ13TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STA335MLJ13TR Datasheet PDF : 20 Pages
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STA335ML
Electrical specifications
3.4
Electrical specifications - digital section
Table 6.
Symbol
Electrical specifications for digital section
Parameter
Conditions
Min
Iil
Input current without bias Vi = 0 V
-10
Iih
device
Vi = VDD = 3.6 V
-10
Vil
Low-level input voltage -
-
Vih
High-level input voltage -
0.8 *
VDD
Vol
Low-level output voltage Iol = 2 mA
-
Voh
High-level output voltage Ioh = 2 mA
Ipu
Pull-up/down current
-
Rpu
Equivalent pull-up/down
resistance
-
0.8 *
VDD
25
-
Typ
-
-
-
-
-
-
66
50
Max
10
10
0.2 *
VDD
-
0.4 *
VDD
-
125
-
Unit
µA
µA
V
V
V
V
µA
kΩ
3.5
Electrical specifications - power section
The specifications given here are with the operating conditions: VCC = 18 V, VDD = 3.3 V,
fsw = 384 kHz, Tamb = 25 °C, RL = 8 Ω unless otherwise specified.
Table 7. Electrical specifications for power section
Symbol
Parameter
Conditions
Min Typ Max Unit
Po
RdsON
ldss
gP
gN
ILDT
IHDT
tr
tf
THD = 1%
-
Output power BTL
THD = 10%
-
On resistance of power
P-channel/N-channel ld = 1 A
-
MOSFET (Total bridge)
Power
P-channel/N-channel VCC = 20 V
-
leakage current
Power P-channel
RdsON matching
ld = 1.5 A
95
Power N-channel
RdsON matching
ld = 1.5 A
95
Low current deadtime
(static)
Resistive load Figure 4
-
High current deadtime
(dynamic)
Load = 1.5 A (Figure 5)
-
Rise time
Resistive load Figure 4 -
Fall time
Resistive load Figure 4 -
16
-
W
20
-
180
250
mΩ
-
10
μA
-
-
%
-
-
%
8
15
ns
15
30
ns
10
18
ns
10
18
ns
Doc ID 17638 Rev 4
7/20
 

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