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STA016 View Datasheet(PDF) - STMicroelectronics

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Description
Manufacturer
STA016 Datasheet PDF : 43 Pages
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STA016A
4 ELECTRICAL CHARACTERISTCS
(Tamb = 25°C; Rg = 50unless otherwise specified)
Table 6. DC OPERATING CONDITIONS
Symbol
Parameter
VDD
Power Supply Voltage
VCC
Power Supply Voltage
PLL_VCC Power Supply Voltage
Value
2.5 ± 0.25
3.3 ± 0.3
2.5 ± 0.25
Unit
V
V
V
Table 7. GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit Note
IIL Low Level Input
Vi = 0V
CurrentWithout pull-up device
-10
10
µA
1
IIH High Level Input
Vi = VDD
CurrentWithout pull-up device
-10
10
µA
1
Vesd Electrostatic Protection
Leakage < 1µA
2000
V
2
Note 1: The leakage currents are generally very small, < 1nA. The value given here is a maximum that can occur after an electrostatic stress
on the pin.
Note 2: Human Body Model.
Table 8. DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit Note
VIL Low Level Input Voltage
0.2*VCC V
VIH High Level Input Voltage
0.8*VCC
V
Vol Low Level Output Voltage
Iol = Xma
0.4V
V
1, 2
Voh High Level Output Voltage
0.85*VCC
V
1, 2
Note1: Takes into account 200mV voltage drop in both supply lines.
Note 2: X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability.
Table 9.
Symbol
Parameter
Test Condition
Ipu Pull-up current
Vi = 0V; pin numbers 7, 24
and 26
Rpu Equivalent Pull-up Resistance
Min.
-25
Typ.
-66
50
Note 1: Min. condition: VDD = 2.7V, 125°C Min process Max. condition: VDD = 3.6V, -20°C Max.
Max.
-125
Unit
µA
k
Note
1
Table 10. POWER DISSIPATION
Symbol
Parameter
Test Condition
PD Power Dissipation@ VDD = 2.4V Sampling_freq 24 kHz
Sampling_freq 32 kHz
Sampling_freq 48 kHz
Min.
Typ.
t.b.d.
t.b.d.
t.b.d.
Max.
Unit
mW
mW
mW
Note
7/43
 

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