ST9015 View Datasheet(PDF) - Semtech Electronics LTD.
Part Name
Description
Manufacturer
ST9015 Datasheet PDF : 2 Pages
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ST 9015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, A, B,
C and D, according to its DC current gain. As
complementary type the NPN transistor ST 9014
is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Value
Unit
50
V
45
V
5
V
100
mA
450
mW
150
OC
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
Current Gain Group A
hFE
60
B
hFE
100
C
hFE
200
D
hFE
400
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 10 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
COB
-
-
50
45
5
-
-
100
-
Max.
150
300
600
800
50
50
-
-
-
0.65
1
-
7
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2008
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