J308 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
J308 Datasheet PDF : 8 Pages
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J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . −55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . −65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipation :
(J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308
J/SST309
J/SST310
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
rDS(on)
VGS(F)
gfs
gos
Ciss
Crss
en
IG = −1 mA , VDS = 0 V
VDS = 10 V, ID = 1 nA
VDS = 10 V, VGS = 0 V
VGS = −15 V, VDS = 0 V
TA = 125_C
VDG = 9 V, ID = 10 mA
VGS = 0 V, ID = 1 mA
IG = 10 mA
VDS = 0 V
J
−35
−25
−25
−25
V
−1 −6.5 −1
−4
−2 −6.5
V
12
60
12
30
24
60 mA
−0.002
−1
−1
−1 nA
−0.001
−1
−1
−1 mA
−15
pA
35
W
0.7
1
1
1
V
14
VDS = 10 V, ID = 10 mA
f = 1 kHz
110
J
4
VDS = 10 V
VGS = −10 V
f = 1 MHz
SST
4
J
1.9
SST
1.9
VDS = 10 V, ID = 10 mA
f = 100 Hz
6
8
10
8
mS
250
250
250 mS
5
5
5
pF
2.5
2.5
2.5
nV⁄
√Hz
High Frequency
Common-Gate
Forward Transconductance
gfg
f = 105 MHz
14
f = 450 MHz
13
mS
Common-Gate
Output Conductance
f = 105 MHz
0.16
gog
VDS = 10 V
f = 450 MHz
0.55
Common-Gate Power Gainc
ID = 10 mA
f = 105 MHz
16
Gpg
f = 450 MHz
11.5
dB
f = 105 MHz
1.5
Noise Figure
NF
f = 450 MHz
2.7
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
NZB
www.vishay.com
2
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
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