1 Megabit Page Mode EEPROM
SST29EE010A / SST29LE010A / SST29VE010A
TABLE 5: SST29EE010A DC OPERATING CHARACTERISTICS VCC = 5V±10%
Limits
Symbol Parameter
Min Max Units
Test Conditions
ICC
Power Supply Current
CE#=OE#=VIL,WE#=VIH , all I/Os open,
Read
30
mA
Address input = VIL/VIH, at f=1/TRC Min.,
VCC=VCC Max
Write
50
mA
CE#=WE#=VIL, OE#=VIH, VCC =VCC Max.
ISB1 Standby VCC Current
(TTL input)
3
mA
CE#=OE#=WE#=VIH, VCC =VCC Max.
ISB2 Standby VCC Current
(CMOS input)
50
µA
CE#=OE#=WE#=VCC -0.3V.
VCC = VCC Max.
ILI
Input Leakage Current
1
µA
VIN =GND to VCC, VCC = VCC Max.
ILO
Output Leakage Current
10
µA
VOUT =GND to VCC, VCC = VCC Max.
VIL
Input Low Voltage
0.8
V
VCC = VCC Min.
VIH
Input High Voltage
2.0
V
VCC = VCC Max.
VOL Output Low Voltage
0.4
V
IOL = 2.1 mA, VCC = VCC Min.
VOH Output High Voltage
2.4
V
IOH = -400µA, VCC = VCC Min.
VH
Supervoltage for A9
11.6 12.4
V
CE# = OE# =VIL, WE# = VIH
IH
Supervoltage Current
for A9
100
µA
CE# = OE# = VIL, WE# = VIH,
A9 = VH Max.
303 PGM T5.1
TABLE 6: SST29LE010A/29VE010A DC OPERATING CHARACTERISTICS VCC = 3.0-3.6 FOR SST29LE010A,
VCC = 2.7-3.6 FOR SST29VE010A
Limits
Symbol Parameter
Min Max Units
Test Conditions
ICC
Power Supply Current
CE#=OE#=VIL,WE#=VIH , all I/Os open,
Read
12
mA
Address input = VIL/VIH, at f=1/TRC Min.,
VCC=VCC Max
Write
15
mA
CE#=WE#=VIL, OE#=VIH, VCC =VCC Max.
ISB1 Standby VCC Current
(TTL input)
1
mA
CE#=OE#=WE#=VIH, VCC =VCC Max.
ISB2 Standby VCC Current
(CMOS input)
15
µA
CE#=OE#=WE#=VCC -0.3V.
VCC = VCC Max.
ILI
Input Leakage Current
1
µA
VIN =GND to VCC, VCC = VCC Max.
ILO
Output Leakage Current
10
µA
VOUT =GND to VCC, VCC = VCC Max.
VIL
Input Low Voltage
0.8
V
VCC = VCC Min.
VIH
Input High Voltage
2.0
V
VCC = VCC Max.
VOL Output Low Voltage
0.4
V
IOL = 100 µA, VCC = VCC Min.
VOH Output High Voltage
2.4
V
IOH = -100 µA, VCC = VCC Min.
VH
Supervoltage for A9
11.6 12.4
V
CE# = OE# =VIL, WE# = VIH
IH
Supervoltage Current
for A9
100
µA
CE# = OE# = VIL, WE# = VIH,
A9 = VH Max.
303 PGM T6.1
© 1999 Silicon Storage Technology, Inc.
8
303-01 2/99