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SPI15N60C3 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
SPI15N60C3
Infineon
Infineon Technologies Infineon
SPI15N60C3 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SPP15N60C3, SPI15N60C3
SPA15N60C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.8
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V
1.4
Vgs = 20V
1.2
1
0.8
0.6
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 9.4 A, VGS = 10 V
SPP15N60C3
1.6
1.2
1
0.8
0.6
0.4
98%
typ
0.2
0.4
0
5
10
15
20
A
30
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 10 µs
60
A
25°C
40
150°C
30
0
-60 -20
20
60 100
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 15 A pulsed
SPP15N60C3
16
V
°C
180
Tj
12
10
0,2 VDS max
0,8 VDS max
8
6
20
4
10
2
0
0
2
4
6
V
10
VGS
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
Rev.2.1
Page 7
2004-09-07
 

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