SPI15N60C3 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SPI15N60C3 Datasheet PDF : 13 Pages
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SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax 650
V
RDS(on)
0.28 Ω
ID
15 A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
3
12
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP15N60C3
SPI15N60C3
SPA15N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4600
P-TO262-3-1 Q67040-S4601
P-TO220-3-31 Q67040-S4603
Marking
15N60C3
15N60C3
15N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=7.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=15A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
15
151)
9.4
9.41)
45
45
460
460
Unit
A
A
mJ
0.8
0.8
15
15 A
±20
±20 V
±30
±30
156
34 W
-55...+150
°C
Rev.2.1
Page 1
2004-09-07
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