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SPI08N50C3 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
SPI08N50C3
Infineon
Infineon Technologies Infineon
SPI08N50C3 Datasheet PDF : 0 Pages
SPP08N50C3, SPI08N50C3
SPA08N50C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDS2*ID*RDS(on)max,
ID=4.6A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V, VDS=400
VDD=380V, VGS=0/10V,
ID=7.6A,
RG=12
Values
Unit
min. typ. max.
-
6
-S
- 750 - pF
- 350 -
-
12
-
-
56
-
-
30
-
-
6
- ns
-
5
-
-
60
-
-
7
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Qgs
Qgd
VDD=400V, ID=7.6A
Gate charge total
Qg
VDD=400V, ID=7.6A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=400V, ID=7.6A
-
3
- nC
-
17
-
-
32
-
-
5
-V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.91
Page 3
2009-11-27
 

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